A single-chain multiband reconfigurable linear power amplifier in SOI CMOS

2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI:10.1109/MWSYM.2015.7167086

U. Kim, J. Woo, Sunghwan Park, Y. Kwon

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引用次数: 6

Abstract

A multiband linear CMOS power amplifier (PA) is developed to cover multiple LTE bands from 800 to 2000 MHz using a single PA core. The single-chain PA is based on a two-stage design using stacked-FET cells, and is designed to support any combinations of low/high dual bands out of five popular 3G/4G bands (Band 1/2/4/5/8). To avoid the performance degradation by covering such a wide bandwidth using a single PA-core, the frequency reconfigurability has been applied to the stacked-FET cells, interstage matching as well as the output matching. To further enhance the linearity and efficiency, a phase-based linearizer is employed and reconfigured according to the operating frequencies. W-CDMA test on the fabricated PA shows adjacent channel leakage ratios (ACLRs) better than -39 dBc up to the rated linear power of 28.5 dBm and power-added efficiencies (PAEs) higher than 40.7% and 46% for high- and low- frequency band groups, respectively. Compared with the dedicated PAs using the same process, PAE degradation is limited to 1.6 ~ 3.3%. To our knowledge, this work is among the best results from the single-chain PAs for 3G/4G mobile applications.

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一种SOI CMOS单链多带可重构线性功率放大器

开发了一种多频段线性CMOS功率放大器(PA)，该放大器使用单个PA核心覆盖800至2000 MHz的多个LTE频段。单链PA基于使用堆叠fet单元的两级设计，旨在支持五个流行的3G/4G频段(频段1/2/4/5/8)中的任何低/高双频段组合。为了避免使用单个pa核覆盖如此宽的带宽而导致性能下降，频率可重构性已应用于堆叠fet单元，级间匹配以及输出匹配。为了进一步提高线性度和效率，采用了基于相位的线性器，并根据工作频率进行了重新配置。W-CDMA测试表明，在额定线性功率为28.5 dBm时，相邻信道泄漏比(ACLRs)优于-39 dBc，功率附加效率(PAEs)分别高于40.7%和46%。与采用相同工艺的专用PAs相比，PAE的降解限制在1.6 ~ 3.3%。据我们所知，这项工作是3G/4G移动应用中单链pa的最佳结果之一。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 IEEE MTT-S International Microwave Symposium

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