Electro-optical Characteristics of NIR Light Emitting Sources for High Resolution Sensing Systems

Frontiers in optics. Annual Meeting of the Optical Society of America Pub Date : 2020-09-14 DOI:10.1364/FIO.2020.FM5C.1

S. Pūkienė, A. Jasinskas, V. Bukauskas, V. Agafonov, M. Kamarauskas, A. Lukša, A. Biciunas, B. Čechavičius, A. Šetkus, R. Butkutė

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Abstract

Laser diodes with parabolic and rectangular AlGa(As,Bi)/AlGaAs QWs were grown by MBE on n-GaAs(001). Operating wavelength was controlled by QW width and material composition. Laser bars processed by UV lithography were characterized by electroluminescence and I-V measurements.

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用于高分辨率传感系统的近红外光源的电光特性

用MBE法在n-GaAs(001)上生长了具有抛物型和矩形AlGa(As,Bi)/AlGaAs量子阱的激光二极管。工作波长由量子阱宽度和材料组成控制。采用紫外光刻技术对激光棒进行了电致发光和I-V测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Frontiers in optics. Annual Meeting of the Optical Society of America

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