Novel semiconductor membrane external-cavity surface-emitting laser

H. Kahle, C. Mateo, U. Brauch, R. Bek, M. Jetter, T. Graf, P. Michler
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Abstract

Optically pumped semiconductor vertical external-cavity surfaceemitting lasers (VECSELs) exhibit many desirable properties1, 2 and have therefore become an important stand-alone class of solid-state lasers over the last 20 years. For example, VECSELs can be used nowadays to reach 100W-level continuous wave output.3 However, a large quantum defect (resulting from the energy difference between pump and laser photons) means that heat is incorporated into the active region of VECSELs. This gives rise to a strongly temperature-dependent performance4 caused by the interplay of gain and cavity resonance and the limited charge-carrier confinement. The limited charge-carrier confinement is a particular challenge in the aluminum gallium indium phosphide (AlGaInP) material system, i.e., in which the thermal conductivity5, 6 is low and the laser structure is based on a thick distributed Bragg reflector (DBR). Indeed, the thermal conductivity of this type of DBR is an order of magnitude lower than well-conducting metals (i.e., which are often used as backside heatsinks) and two orders of magnitude worse than diamond (commonly used for the backside or as an intracavity heat spreader).7 In addition, the semiconductor structure itself—with a thickness of several micrometers (for the active region and the DBR)—and the substrate (with a typical thickness of 350 m) impede the heat flow out of the active region. To overcome the heat flow problems and to improve the performance of VECSELs, numerous thermal management strategies have been previously proposed. Such approaches include changes to the heat spreader arrangement,8 removing the substrate,1 flip-chip processes,9 or the insertion of compound mirrors.10 According to the natural progression of these Figure 1. Picture of the semiconductor membrane external-cavity surface-emitting laser (MECSEL) in operation. From left to right, the out-coupling/resonator mirror, diamond-sandwiched semiconductor gain membrane (integrated into a brass mount), birefringent filter, and pump optics with a 532nm pump laser beam (behind the birefringent filter), and a highly reflective resonator can be seen (as illustrated schematically in Figure 2).
新型半导体膜外腔表面发射激光器
光泵浦半导体垂直外腔表面发射激光器(VECSELs)表现出许多理想的特性1,2,因此在过去的20年中已成为一个重要的独立类别的固态激光器。例如,现在使用VECSELs可以达到100w级别的连续波输出然而,一个大的量子缺陷(由泵浦光子和激光光子之间的能量差造成)意味着热量被吸收到VECSELs的活动区域。由于增益和腔共振的相互作用以及有限的载流子约束,这就产生了强烈的温度依赖性能。在磷化铝镓铟(AlGaInP)材料体系中,有限的载流子约束是一个特别的挑战,即热导率5,6较低,激光结构基于厚分布布拉格反射器(DBR)。事实上,这种类型的DBR的导热性比导电良好的金属(即,通常用作背面散热器)低一个数量级,比金刚石(通常用于背面或作为腔内散热器)差两个数量级此外,半导体结构本身——厚度为几微米(用于有源区和DBR)——和衬底(典型厚度为350米)阻碍了热流从有源区流出。为了克服热流问题并提高VECSELs的性能,以前已经提出了许多热管理策略。这些方法包括改变散热片的布置,8去除基板,1倒装芯片工艺,9或插入复合反射镜根据这些的自然进程图1。图为运行中的半导体膜外腔表面发射激光器(MECSEL)。从左到右,可以看到外耦合/谐振镜,金刚石夹层半导体增益膜(集成到黄铜支架中),双折射滤波器,带有532nm泵浦激光束(在双折射滤波器后面)的泵浦光学器件,以及高反射谐振器(如图2所示)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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