Electrical resistivity and magnetoresistance in Fe-B-C amorphous alloys

S. Roy, A. Nigam, G. Chandra, A. Majumdar
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引用次数: 4

Abstract

The low-temperature electrical resistivity in Fe80B20-x (x=0, 2 and 8) shows a well defined resistivity minimum at Tmin. Both Tmin and the depth of the minimum increase with x whereas a magnetic field as high as 39 kOe hardly changes either feature. This indicates that the origin of the resistivity minimum may be other than magnetic. The data below Tmin fit better with rho varies as ln T than rho varies as square root T. The magnetoresistance data seem to suggest the presence of both localisation and correlation effects. The high-field negative magnetoresistance in Fe80B20C0 varying as square root H is in quantitative agreement with the localisation picture.
Fe-B-C非晶合金的电阻率和磁阻
Fe80B20-x (x= 0,2和8)的低温电阻率在Tmin处有明确的电阻率最小值。最小值和最小深度随x增加而增加,而高达39koe的磁场几乎没有改变这两个特征。这表明电阻率最小值的来源可能不是磁性的。Tmin以下的数据与rho随ln T变化比rho随根号T变化更吻合。磁电阻数据似乎表明局域效应和相关效应都存在。Fe80B20C0的高场负磁电阻随平方根H的变化与局域化图定量一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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