Impact of Transistor Aging on the Reliability of the Analog Circuit

A. Bhattacharjee, S. Pradhan
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引用次数: 3

Abstract

Transistor aging affects has become a serious reliability issue in today’s deep submicron technology. With continuous scaling of transistor size along with process variation negative-bias temperature instability (NBTI) nowadays has become a serious reliability concern in analog and mixed-circuits. Due to NBTI induced increase in threshold voltage, analog circuit undergoes heavy performance degradation; as a result, their lifetime reduces. Op-amp is the basic building block of the Analog circuit. In earlier works, it has been observed that NBTI degradation is considerable when the op-amp circuit is used as a comparator. Also some circuits like buffer, current-steering DAC are affected due to aging. In this work, we have analyzed the aging effect on these circuits. We have also proposed a technique that mitigates NBTI degradation and increases the lifetime of the comparator. This technique increases the lifetime of comparator up to 4 years with negligible power overhead. This technique can be applied to other analog circuits also, which are affected due to NBTI. The simulation is done using cadence relxpert in UMC 28nm technology.
晶体管老化对模拟电路可靠性的影响
晶体管老化影响已成为当今深亚微米技术中一个严重的可靠性问题。随着晶体管尺寸的不断缩小和工艺的变化,负偏置温度不稳定性(NBTI)已成为模拟和混合电路中一个严重的可靠性问题。由于NBTI引起的阈值电压升高,模拟电路的性能严重下降;因此,它们的寿命缩短了。运算放大器是模拟电路的基本组成部分。在早期的工作中,已经观察到当运放电路用作比较器时,NBTI的退化是相当大的。还有一些电路,如缓冲器,电流转向DAC也会受到老化的影响。在这项工作中,我们分析了老化对这些电路的影响。我们还提出了一种减轻NBTI退化和增加比较器寿命的技术。这种技术将比较器的使用寿命提高到4年,而功率开销可以忽略不计。该技术也可应用于其他受NBTI影响的模拟电路。采用联华电子28nm工艺的cadence relexpert进行仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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