M. Yusoff, A. Mahyuddin, Z. Hassan, Muhammad, Syariffudin Yahya
{"title":"Effect of Dry Oxidation and Thermal Annealing on AlN/GaN/AlN/Si (111) and Evaluation of its Electrical Characteristics","authors":"M. Yusoff, A. Mahyuddin, Z. Hassan, Muhammad, Syariffudin Yahya","doi":"10.7454/mss.v25i4.1249","DOIUrl":null,"url":null,"abstract":"We proposed a technique for improving the platinum (Pt) Schottky contact dark current of the AlN/GaN/AlN/Si(111) substrate. The AlN/GaN/AlN/ heterostructure sample was successfully grown on a silicon substrate by radio frequency molecular beam epitaxy. The high quality of the interlayer heterostructure sample was verified by transmission electron microscopy (TEM). From the TEM image, a good quality single interface layer with spacing less than 1 nm was detected. The strong significant peaks obtained by X-ray diffraction measurement indicated that the sample has a high structural quality for each grown layer. Dry oxidation and thermal annealing were used in conjunction to effectively reduce the leakage current of the Schottky contact of the AlN/GaN/AlN/Si(111) substrate. Energy-dispersive X-ray analysis revealed the presence of the element oxygen. Dry oxidation enhanced the surface roughness and surface-active area of the samples. Al2O3 contributed to the low leakage current of the Pt Schottky contact of the AlN/GaN/AlN/Si(111) substrate. The Al2O3 layer acted as an insulator layer, and retarded the current flow of devices.","PeriodicalId":18042,"journal":{"name":"Makara Journal of Science","volume":"92 1","pages":""},"PeriodicalIF":0.8000,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Makara Journal of Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7454/mss.v25i4.1249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0
Abstract
We proposed a technique for improving the platinum (Pt) Schottky contact dark current of the AlN/GaN/AlN/Si(111) substrate. The AlN/GaN/AlN/ heterostructure sample was successfully grown on a silicon substrate by radio frequency molecular beam epitaxy. The high quality of the interlayer heterostructure sample was verified by transmission electron microscopy (TEM). From the TEM image, a good quality single interface layer with spacing less than 1 nm was detected. The strong significant peaks obtained by X-ray diffraction measurement indicated that the sample has a high structural quality for each grown layer. Dry oxidation and thermal annealing were used in conjunction to effectively reduce the leakage current of the Schottky contact of the AlN/GaN/AlN/Si(111) substrate. Energy-dispersive X-ray analysis revealed the presence of the element oxygen. Dry oxidation enhanced the surface roughness and surface-active area of the samples. Al2O3 contributed to the low leakage current of the Pt Schottky contact of the AlN/GaN/AlN/Si(111) substrate. The Al2O3 layer acted as an insulator layer, and retarded the current flow of devices.