{"title":"A design of the frequency synthesizer for DRM/DAB/AM/FM application in 0.18 µm RF CMOS process","authors":"L. Xuemei, Wang Zhigong, Wang Keping","doi":"10.1109/EDSSC.2011.6117664","DOIUrl":null,"url":null,"abstract":"This paper describes a frequency synthesizer for DRM/DAB/AM/FM application using 0.18µm CMOS process. The frequency synthesizer operates in the multi-band, including DRM, DAB, AM, and FM. To cover the overall frequencies of them, a novel frequency planning and a new structure are proposed. The monolithic DRM/DAB frequency synthesizer chip is also fabricated in a SMIC's 0.18 µm CMOS process. The die area is 1425 µm×795 µm (include test buffer and pads). The measured results show that phase noise in PLL loop is •59.52dBc/Hz at 10 kHz offset, the measured phase errors of LO quadrature signals is less than 3°. The proposal frequency synthesizer consume 47 mW (include test buffer) under a 1.8 V supply.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper describes a frequency synthesizer for DRM/DAB/AM/FM application using 0.18µm CMOS process. The frequency synthesizer operates in the multi-band, including DRM, DAB, AM, and FM. To cover the overall frequencies of them, a novel frequency planning and a new structure are proposed. The monolithic DRM/DAB frequency synthesizer chip is also fabricated in a SMIC's 0.18 µm CMOS process. The die area is 1425 µm×795 µm (include test buffer and pads). The measured results show that phase noise in PLL loop is •59.52dBc/Hz at 10 kHz offset, the measured phase errors of LO quadrature signals is less than 3°. The proposal frequency synthesizer consume 47 mW (include test buffer) under a 1.8 V supply.