A 50Gb/s Hybrid Integrated Si-Photonic Optical Link in 16nm FinFET

2019 Symposium on VLSI Circuits Pub Date : 2019-06-01 DOI:10.23919/VLSIC.2019.8778047

M. Raj, Y. Frans, Sai Lalith Chaitanya Ambatipudi, David Mahashin, P. Heyn, S. Balakrishnan, J. Campenhout, Jimmy Grayson, M. Epitaux, Ken Chang

引用次数: 3

Abstract

This work presents an Electro-Absorption Modulator (EAM) based single-mode 50Gb/s NRZ optical link in 16nm FinFET. The TX uses T-coil based over-peaking to improve modulation efficiency and relax TIA’s bandwidth and noise requirement. The RX uses a 3-stage TIA with T-coils to improve BW. The link sensitivity is -10.9dBm OMA at BER $\lt 10^{-12}$ and it consumes 4.31pJ/bit at 50Gb/s with 2dB link margin.

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16nm FinFET 50Gb/s混合集成硅光子光链路

本文提出了一种基于电吸收调制器(EAM)的16nm FinFET单模50Gb/s NRZ光链路。TX采用基于t型线圈的调峰，以提高调制效率，放松TIA的带宽和噪声要求。RX使用3级TIA和t型线圈来提高体重。链路灵敏度为-10.9dBm OMA在BER $\lt 10^{-12}$，它消耗4.31pJ/bit在50Gb/s与2dB链路余量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 Symposium on VLSI Circuits

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