D. Sacchetto, M. D. Marchi, G. Micheli, Y. Leblebici
{"title":"Alternative design methodologies for the next generation logic switch","authors":"D. Sacchetto, M. D. Marchi, G. Micheli, Y. Leblebici","doi":"10.1109/ICCAD.2011.6105331","DOIUrl":null,"url":null,"abstract":"Next generation logic switch devices are expected to rely on radically new technologies mainly due to the increasing difficulties and limitations of state-of-the-art CMOS switches, which, in turn, will also require innovative design methodologies that are distinctly different from those used for CMOS technologies. In this paper, three alternative emerging technologies are showcased in terms of their requirements for design implementation and in terms of potential advantages. First, a CMOS evolutionary approach based on vertically-stacked gate-all-around Si nanowire FETs is discussed. Next, an alternative design methodology based on ambipolar carbon nanotube FETs is presented. Finally, a novel approach based on the recently discovered memristive devices is presented, offering the possibility of combining memory and logic functions.","PeriodicalId":6357,"journal":{"name":"2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCAD.2011.6105331","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Next generation logic switch devices are expected to rely on radically new technologies mainly due to the increasing difficulties and limitations of state-of-the-art CMOS switches, which, in turn, will also require innovative design methodologies that are distinctly different from those used for CMOS technologies. In this paper, three alternative emerging technologies are showcased in terms of their requirements for design implementation and in terms of potential advantages. First, a CMOS evolutionary approach based on vertically-stacked gate-all-around Si nanowire FETs is discussed. Next, an alternative design methodology based on ambipolar carbon nanotube FETs is presented. Finally, a novel approach based on the recently discovered memristive devices is presented, offering the possibility of combining memory and logic functions.