Model of quantum interferometer in vacuum nanotriode and quantum bit realization

Abstract

Thanks to resent achievements in the Electron Beam Lithography (EBL) and Focused Ion Beam (FIB) lithography was built new type of electron devices: vacuum field emission nanodiode and nanodiode and nanotriode. Nanodiode and nanotriode have cathode about 2 nm in diameter, anode current 10 nA and gate potential 10 V. These devices display new quatnum properties. In the paper of Driscill-Smith et al was experimentally displayed series of the interference oscillation in the transconductance of nanotriode by linear chaging of the gate potential. The model of quantum potential box used by the authors of the work has does not explain the effect. In the present paper is made an attempt to explain the properties of nanotriode by means of the quansi-classical eikonal method and the diffraction theory. Simultaneously it is suggested to change the parameters of the nanotriode to display clearer quantum properties.