Modification of adhesion forces in multiple layers of transition metal dichalcogenides using illumination for micro-actuators

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Pub Date : 2015-06-21 DOI:10.1109/TRANSDUCERS.2015.7181201

N. I. Mou, M. Tabib-Azar

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Abstract

Surface adhesion forces in few layers of layered transition metal dichalcogenides (ReS₂, NbS₂, n-type WSe₂, MoS₂, p-type MoSe₂, TaS₂) hexagonal BN (hBN) and graphene were determined using atomic force microscope with conducting silicon tip in dark and under illumination to identify material for integrated optical sensor in NEMS/MEMS switches. In all cases the surface adhesion forces increased under illumination. WSe₂, an indirect band gap with 1.66 eV energy, showed the largest change of ~165% in its adhesion force. Hexagonal BN, a wide band gap energy material of 5.5 eV, showed the smallest change of 7.2% comparable to changes in our control samples of 90 nm SiO₂ on Si and 100 nm Au on SiO₂/Si. NbS₂ and graphene, samples with the smallest energy band gaps, respectively showed 54.8% and 8.4% increase in surface adhesion forces under illumination.

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用微致动器照明改变多层过渡金属二硫化物的附着力

为了确定NEMS/MEMS开关中集成光学传感器的材料，在黑暗和光照条件下，利用带导电硅尖端的原子力显微镜测定了六方BN (hBN)和石墨烯在多层过渡金属二硫化物(ReS2、NbS2、n型WSe2、MoS2、p型MoSe2、TaS2)中的表面附着力。在所有情况下，表面附着力在光照下增加。WSe2为间接带隙，能量为1.66 eV，其附着力变化最大，约为165%。六方BN是一种5.5 eV的宽带隙能材料，与90 nm SiO2在Si上和100 nm Au在SiO2/Si上的对照样品相比，变化最小，为7.2%。能带隙最小的NbS2和石墨烯样品在光照下表面附着力分别提高了54.8%和8.4%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

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