A four-state magnetic tunnel junction switchable with spin–orbit torques

Shubhankar Das, Ariel Zaig, M. Schultz, S. Cardoso, D. Leitao, L. Klein
{"title":"A four-state magnetic tunnel junction switchable with spin–orbit torques","authors":"Shubhankar Das, Ariel Zaig, M. Schultz, S. Cardoso, D. Leitao, L. Klein","doi":"10.1063/5.0014771","DOIUrl":null,"url":null,"abstract":"We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent states of the TCE structure. Flowing current in an underlying Ta layer generates in the adjacent TCE structure spin-orbit torques which induce field-free switching of the four-state MTJ between all its resistance states. The demonstrated four-state MTJ is an important step towards fabricating multi-level MTJs with numerous resistance states which could be important in various spintronics applications, such as multi-level magnetic random access or neuromorphic memory.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"9 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0014771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent states of the TCE structure. Flowing current in an underlying Ta layer generates in the adjacent TCE structure spin-orbit torques which induce field-free switching of the four-state MTJ between all its resistance states. The demonstrated four-state MTJ is an important step towards fabricating multi-level MTJs with numerous resistance states which could be important in various spintronics applications, such as multi-level magnetic random access or neuromorphic memory.
具有自旋轨道转矩可切换的四态磁隧道结
我们提出了一种磁隧道结(MTJ),它的两个铁磁层以单椭圆(SE)和双交叉椭圆(TCE)的形式存在。MTJ表现出四种不同的电阻状态,与TCE结构的四种剩余状态相对应。Ta层中的流动电流在相邻的TCE结构中产生自旋轨道转矩,引起四态MTJ在其所有电阻态之间的无场切换。所展示的四态MTJ是制造具有众多电阻态的多层次MTJ的重要一步,这在各种自旋电子学应用中可能很重要,例如多层次磁随机存取或神经形态记忆。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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