Low temperature aluminum induced crystallization of HWCVD deposited a-Si:H

Abstract

Present work provides a comprehensive study on Aluminum induced crystallization (AIC) of Hot Wire Chemical Vapour Deposited (HWCVD) a-Si:H. Different parameters, namely, layer sequence, annealing temperature and time, were studied to correlate their impact on the quality of nc-Si:H films obtained by AIC. Device quality nc-Si:H thin films at a very low temperature of 473 K were obtained for the layer sequence of substrate/a-Si:H/Al.