Evaluation of the diffusion thermoelectric power of bismuth

Abstract

The temperature dependences of the Fermi energies for electrons and holes in Bismuth are computed in the range 80–300°K, taking into account the non-parabolicity and non-ellipsoidicity of the conduction band. The partial diffusion thermoelectric powers for electrons and holes, and the total diffusion thermoelectric power in the two principal directions are then deduced. Computed values are compared with recent experimental data.