LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD.

S. A. Dargham, F. Ponchel, M. Soueidan, A. Khoury, J. Assaad, D. Remiens, D. Zaouk
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引用次数: 2

Abstract

The objective of this work is to synthesize lead-free piezoelectric thin films by the Sol-Gel method:bismuth sodium titanate (Bi0.5Na0.5TiO3 or BNT).BNT films were annealed with the rapid thermal process (RTP).The film treated at 700°C is dense and well crystallized in the perovskite phase. The first results of electricalcharacterizations showed promising dielectric, ferroelectric and piezoelectric performance. At 12 kHz, thedielectric constant and losses are 430 and 0.07, respectively. Ferroelectric hysteresis measurements indicated aremanent polarization of 10μC/cm2, associated with a coercive field of 70 kV/cm. The piezoelectric properties ofBNT films were studied with a laser Doppler interferometer: a piezoelectric coefficient (d33effmax) of 42 pm/V was measured.
溶胶-凝胶法制备无铅BNT压电薄膜。
本工作的目的是通过溶胶-凝胶法合成无铅压电薄膜:钛酸铋钠(Bi0.5Na0.5TiO3或BNT)。采用快速热处理技术(RTP)对BNT薄膜进行了退火。在700℃下处理的薄膜致密且在钙钛矿相中结晶良好。电学表征的初步结果显示了良好的介电、铁电和压电性能。在12 kHz时,介电常数和损耗分别为430和0.07。铁电迟滞测量结果表明,在70 kV/cm的矫顽力场下,铁电迟滞极化强度为10μC/cm2。用激光多普勒干涉仪研究了bnt薄膜的压电特性,测得其压电系数(d33effmax)为42 pm/V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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