Degradation of Surface Recombination Velocity at a-Si/c-Si interface under light and temperature

Salman Manzoor, M. Bertoni
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引用次数: 1

Abstract

With silicon heterojunction (SHJ) solar cells at their practical efficiency limit, their long-term reliability and stability remains the hindering block toward mass adoption. Precisely, it is the degradation of passivation over time under field operating conditions at amorphous silicon (a-Si:H) and crystalline silicon (c-Si) interface that is a concern. Therefore, we investigate the passivation quality of a-Si:H/c-Si in terms of interface defect and charge density by extracting surface recombination velocity (SRV) using the temperature- and injection- dependent lifetime spectroscopy technique. Our results show passivation quality of the interface degrades at elevated temperature due to thermally activated defects at the surface. Moreover, temporal dependence of a-Si:H/c-Si interface passivation shows degradation due to increase in SRV originating from failing chemical passivation exhibited by an increase in defect density at the interface. Interestingly, field passivation seems to remain the same through the time of these experiments.
光和温度作用下a-Si/c-Si界面表面复合速度的退化
由于硅异质结(SHJ)太阳能电池的实际效率极限,其长期的可靠性和稳定性仍然是大规模采用的障碍。确切地说,在现场操作条件下,非晶硅(a- si:H)和晶体硅(c-Si)界面的钝化性能随着时间的推移而退化是一个值得关注的问题。因此,我们利用依赖于温度和注入的寿命谱技术提取表面复合速度(SRV),从界面缺陷和电荷密度方面研究了a-Si:H/c-Si的钝化质量。我们的研究结果表明,由于表面存在热激活缺陷,界面的钝化质量在高温下会下降。此外,a-Si:H/c-Si界面钝化的时间依赖性显示,由于界面缺陷密度增加导致化学钝化失败而导致SRV增加,导致SRV下降。有趣的是,在这些实验中,场钝化似乎保持不变。
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