InP solar cell improvement by inverse delta-doping

Abstract

Recombination loss mechanisms in InP homojunction solar cells are analyzed using numerical modeling. To reduce the junction leakage current, it is proposed to introduce a thin undoped layer with low recombination center density near the pn-junction. This inverse delta-doping is found to be most beneficial in low efficiency p/sup +/n-InP cells, improving the open circuit voltage by 50 mV, the fill factor by 0.09, and the efficiency by 2 percentage points.