W. Kim, R. Bruce, T. Masuda, G. Fraczak, N. Gong, P. Adusumilli, S. Ambrogio, H. Tsai, J. Bruley, J.-P. Han, M. Longstreet, F. Carta, K. Suu, M. BrightSky
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引用次数: 42
Abstract
We have demonstrated, for the first time, a combination of outstanding linearity of analog programming with matched PCM pairs, small analog programming noise, an extremely low resistance drift (R-drift) coefficient (0.005, median) and high endurance for a CVD-based confined phase change memory (PCM) with a thin metallic liner. In-depth analysis of linear analog programming is also presented. MNIST simulations using a pair of these confined PCM devices as a synaptic element yield a high test accuracy of 95%.
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