Surface Smoothing and Roughening Effects of High-K Dielectric Materials Deposited by Atomic Layer Deposition and Their Significance for MIM Capacitors Used in Dram Technology Part II

W. Lau
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引用次数: 1

Abstract

Previously, the author suggested that the atomic layer deposition (ALD) of an amorphous high-k dielectric thin film has a surface smoothing effect on a rough surface. In this paper, the author points out that for ALD high-k dielectric materials which tend to be polycrystalline, the situation is different. When the film is very thin, it can be amorphous with a surface smoothing effect; when the film is thicker than a critical thickness, it can be polycrystalline with a surface roughening effect. An asymmetry in interfacial roughness will lead to an asymmetry in the top and bottom Schottky barrier heights, resulting in I-V polarity asymmetry. The significance of this theory on the leakage current mechanism of ZAZ MIM capacitors used in DRAM technology will be explained.
原子层沉积高k介电材料表面的光滑和粗化效应及其对Dram技术中MIM电容器的意义(二
在此之前,作者提出了非晶高k介电薄膜的原子层沉积(ALD)对粗糙表面具有表面平滑作用。在本文中,作者指出,对于ALD高k介电材料,倾向于多晶,情况是不同的。当薄膜很薄时,可以无定形,具有表面平滑效果;当薄膜厚度大于临界厚度时,可形成多晶,具有表面粗化效果。界面粗糙度的不对称将导致顶部和底部肖特基势垒高度的不对称,从而导致I-V极性不对称。说明了该理论对用于DRAM技术的ZAZ MIM电容器漏电流机理的意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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