A novel compact isolated structure for 600V Gate Drive IC

Abstract

A novel compact isolation structure for high voltage Gate Drive IC is proposed in this paper. As compared with the conventional isolation structure, the proposed structure can achieve the same breakdown capacity with smaller area by adding N-well islands into P-well region which located between LDMOS (Lateral double diffused MOS) and HVJT (high voltage junction termination) region. Moreover, there is no punch through risk in the region between LDMOS and High-side in proposed structure. Finally, a 600V isolation structure is realized with its drift length is only 49µm.