Laser-induced crystallization in Ga15Se81Zn4 chalcogenide thin films

F. Al-Hazmi
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引用次数: 0

Abstract

. Ga 15 Se 81 Zn 4 chalcogenide thin films having thickness 300 nm, prepared by vacuum evaporation technique were crystallized by Nitrogen Laser for 10, 20 and 30 min. As-synthesized and laser-crystallized films were analyzed by X-ray diffraction, field emission scanning electron microscopy (FESEM), UV/VIS/NIR spectroscopy and dc conductivity measurements. The observed optical band gap becomes smaller by inducing laser-crystallization period 0 to 30 min, which is due to the crystallization of amorphous films. The lowering of band gap by laser-crystallization is an interesting behavior for a material to be used in various electronic devices. The dc conductivities of as-synthesized and laser-crystallized films were analyzed at different temperatures from room temperature to 400 K. We have noticed that the dc conductivity becomes larger at different temperatures under investigation at different laser-crystallization time. Similar to behavior of optical band gap, the dc conductivity activation energy is also observed to become slower with increasing laser-crystallization time and there is a good compliance between these two values.
Ga15Se81Zn4硫系薄膜的激光诱导结晶
. 采用真空蒸发法制备了厚度为300 nm的ga15 Se 81 Zn 4硫系化合物薄膜,用氮激光对其进行了10、20和30 min的结晶处理,并通过x射线衍射、场发射扫描电镜(FESEM)、紫外/可见/近红外光谱(UV/VIS/NIR)和直流电导率测量对制备的薄膜和激光结晶膜进行了分析。通过诱导激光结晶周期为0 ~ 30min,观察到的光学带隙变小,这是由于非晶膜的结晶。通过激光结晶降低带隙是一种有趣的行为,用于各种电子器件的材料。在室温至400 K的不同温度下,分析了合成膜和激光结晶膜的直流电导率。我们注意到,在不同的激光结晶时间下,在不同的温度下,直流电导率会变大。与光学带隙的行为相似,直流电导率活化能也随着激光结晶时间的增加而变慢,两者之间有很好的顺应性。
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