A 0.37W 143dB-Dynamic-Range 1Mpixel Backside-Illuminated Charge-Focusing SPAD Image Sensor with Pixel-Wise Exposure Control and Adaptive Clocked Recharging

Yasuharu Ota, K. Morimoto, T. Sasago, Mahito Shinohara, Y. Kuroda, Wataru Endo, Y. Maehashi, Shintaro Maekawa, Hiroyuki Tsuchiya, Aymantarek Abdelahafar, Shingo Hikosaka, Masanao Motoyama, Kenzo Tojima, Kosei Uehira, Junji Iwata, F. Inui, Y. Matsuno, Katsuhito Sakurai, T. Ichikawa
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引用次数: 16

Abstract

Demands for single-photon-sensitive high-dynamic-range (HDR) imaging in security, automotive, and medical applications have driven development of scalable single-photon avalanche diode (SPAD)-based image sensors. In recent years, 3D-stacking technology combined with advanced CMOS processes has enabled pixel-parallel photon counting in sub-10µm SPAD pixels. A major technical challenge in realizing high-definition SPAD image sensors lies in a trade-off between power consumption and dynamic range (DR). SPAD pixels inherently consume a considerable amount of power due to the high-voltage operation and high current gain. Power consumption from the SPAD array (PSPAD) grows significantly with increasing incident photon flux, and often dominates over that from the readout circuit under high light conditions. Restricting maximum photon counts per frame could suppress the maximum PSPAD, at the expense of DR. To address this issue, a recharging circuit architecture must be carefully considered. Passive recharging has been widely employed for HDR imaging SPADs [1]–[3], but it is not a viable option for megapixel implementation due to the huge PSPAD, typically reaching tens of watts at excess illuminance. A clocked recharging architecture provides a scalable solution thanks to its compact circuitry and greatly reduced PSPAD at excess illuminance [4]–[6], but to date no existing SPAD sensor has simultaneously achieved megapixel resolution, sub-watt total power consumption, and > 120dB DR.
一个0.37瓦143 db动态范围100万像素背照充电聚焦SPAD图像传感器,具有逐像素曝光控制和自适应时钟充电功能
安全、汽车和医疗应用对单光子敏感高动态范围(HDR)成像的需求推动了基于可扩展单光子雪崩二极管(SPAD)的图像传感器的发展。近年来,3d堆叠技术与先进的CMOS工艺相结合,实现了低于10µm SPAD像素的像素并行光子计数。实现高清晰度SPAD图像传感器的主要技术挑战是在功耗和动态范围(DR)之间进行权衡。由于高压工作和高电流增益,SPAD像素固有地消耗相当多的功率。SPAD阵列(PSPAD)的功耗随着入射光子通量的增加而显著增加,并且在高光条件下通常优于读出电路的功耗。限制每帧最大光子数可以抑制最大PSPAD,以牺牲dr为代价。为了解决这个问题,必须仔细考虑充电电路架构。被动充电已被广泛用于HDR成像spad[1] -[3],但由于PSPAD巨大,通常在过量照度下达到数十瓦,因此它不是百万像素实现的可行选择。时钟充电架构提供了一种可扩展的解决方案,这要归功于其紧凑的电路和在过量照度下大大降低PSPAD[4] -[6],但迄今为止,没有现有的SPAD传感器能够同时实现百万像素分辨率、亚瓦总功耗和> 120dB DR。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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