A 0.02mm2 100dB-DR Impedance Monitoring IC with PWM-Dual GRO Architecture

Hyeonho Han, Woojun Choi, Youngcheol Chae
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引用次数: 5

Abstract

This paper presents an impedance monitoring IC that achieves small area and wide DR. The stimulated signal is encoded by using pulse width modulation (PWM) and complex impedance can be measured by in- (I) and quadrature- (Q) phase outputs through dual phase demodulation. The two-level I/Q signals drive two gated-ring-oscillator (GRO) based ADCs, thus eliminating the distortion of GROs. Fabricated in 0.11μm CMOS, the prototype IC occupies only 0.02mm2. It achieves a wide DR of 100dB and a resolution of 19.21Ωrms at 1MΩ resistance in a conversion time of 5ms, and consumes 152.3μW. It corresponds to state-of-the-art resolution FoM of 14.6pJ/step.
采用pwm -双GRO结构的0.02mm2 100dB-DR阻抗监测IC
本文提出了一种实现小面积宽dr的阻抗监测集成电路,受激信号采用脉宽调制(PWM)编码,通过双相位解调,可通过内(I)相和正交(Q)相输出测量复杂阻抗。双电平I/Q信号驱动两个基于门环振荡器(GRO)的adc,从而消除了GRO的失真。原型IC采用0.11μm CMOS制作,占地面积仅为0.02mm2。在1MΩ电阻下,转换时间为5ms,宽DR为100dB,分辨率为19.21Ωrms,功耗为152.3μW。它对应于14.6pJ/step的最先进分辨率FoM。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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