Systematic Missing Pattern Defects Introduced by Topcoat Change at PC Lithography: A Case Study in the Tandem Usage of Inspection Methods

M. Fields, R. V. Roijen, M. Lucksinger
{"title":"Systematic Missing Pattern Defects Introduced by Topcoat Change at PC Lithography: A Case Study in the Tandem Usage of Inspection Methods","authors":"M. Fields, R. V. Roijen, M. Lucksinger","doi":"10.1109/ASMC49169.2020.9185313","DOIUrl":null,"url":null,"abstract":"For a recent topcoat change at gate lithography in the 32nm technology, it was found that the newly created focus condition caused systematic missing pattern on wrong-way gate structures. To find the correct focus condition, several inspections had to be used in tandem. These included focus exposure matrix measurements to evaluate the structures of interest at varying focus, process window centering inspections to find general impact of focus changes, and automatic process inspections to ensure consistency of the structures of interest with varying focus.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"51 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

For a recent topcoat change at gate lithography in the 32nm technology, it was found that the newly created focus condition caused systematic missing pattern on wrong-way gate structures. To find the correct focus condition, several inspections had to be used in tandem. These included focus exposure matrix measurements to evaluate the structures of interest at varying focus, process window centering inspections to find general impact of focus changes, and automatic process inspections to ensure consistency of the structures of interest with varying focus.
PC光刻中面漆变化引起的系统性缺失缺陷:检测方法串联使用的案例研究
对于最近在32nm工艺中栅极光刻的面涂层变化,发现新创建的焦点条件导致错误方向栅极结构上的系统性缺失。为了找到正确的焦点条件,必须同时使用几次检查。其中包括焦距曝光矩阵测量,以评估不同焦距下感兴趣的结构,过程窗口中心检查,以发现焦点变化的一般影响,以及自动过程检查,以确保不同焦距下感兴趣的结构的一致性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信