A. M. Angelotti, G. P. Gibiino, T. Nielsen, F. Tafuri, A. Santarelli
{"title":"Three Port Non-Linear Characterization of Power Amplifiers under Modulated Excitations Using a Vector Network Analyzer Platform","authors":"A. M. Angelotti, G. P. Gibiino, T. Nielsen, F. Tafuri, A. Santarelli","doi":"10.1109/MWSYM.2018.8439845","DOIUrl":null,"url":null,"abstract":"This paper presents a novel single-instrument solution for combined characterization of power amplifiers (PAs) at radiofrequency (RF) and baseband. It extends the capabilities of a commercial vector network analyzer (VNA) platform by enabling calibrated and synchronized RF envelope and baseband current/voltage measurements on the supply terminal of the amplifier across several MHz of bandwidth. As an application example, full three-port measurements of a 2-W gallium nitride (GaN) PA are reported.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"34 1","pages":"1021-1024"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE/MTT-S International Microwave Symposium - IMS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2018.8439845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper presents a novel single-instrument solution for combined characterization of power amplifiers (PAs) at radiofrequency (RF) and baseband. It extends the capabilities of a commercial vector network analyzer (VNA) platform by enabling calibrated and synchronized RF envelope and baseband current/voltage measurements on the supply terminal of the amplifier across several MHz of bandwidth. As an application example, full three-port measurements of a 2-W gallium nitride (GaN) PA are reported.