The criteria of formation of InAs quantum dots in the presence of ultrasound

Abstract

The non-linear diffusion-deformation theory of self-organization of nanoclusters of dot defects in semiconductor exposed to ultrasound treatment that considers the interaction of defects among themselves and with atoms of a matrix via the elastic field created by dot defects and an acoustic wave is developed. Within this theory the influence of ultrasound on the conditions of formation of spherical nanoclusters InAs and their radius is investigated, the formation criteria according to the deformation amplitude value, average defects concentration, and temperature are determined. The nanocluster size depending on average concentration of defects and amplitude of an acoustic wave is determined. It is established that ultrasonic treatment of the semiconductor GaAs in the process of formation of an ensemble of InAs nanoclusters leads to reduction of dispersion of their sizes. In the framework of this model, a possibility of the ultrasound-stimulated the size dispersion reduction of strained InAs/GaAs quantum dots doped with an isovalent impurity are analyzed.