Effect of HCN passivation on silicon oxide thin layer

Abstract

Silicon dioxide layers are materials with unique dielectric and interface properties. We investigated samples with SiO2 layers prepared with nitric acid oxidation of silicon (NAOS) method and with natural oxide layer after passivation with HCN aqueous solution. Samples were investigated with atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectroscopy. We found higher roughness of layers after passivation and different effects of HCN passivation on samples. From the measurements, we conclude that HCN passivation influences structural and optical properties of SiO2 layer.