Experimental and simulative investigations of conducted EMI performance of IGBTs for 5-10 kVA converters

F. Klotz, J. Petzoldt, H. Volker
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引用次数: 15

Abstract

Power switches with high dv/dt and di/dt rates like IGBTs are the source of EMI. The paper presents investigations of conducted EMI on IGBTs in different test circuits. Moreover, results are explained from a special developed model for prediction of common and differential mode interferences, that is suitable to determine solutions for a better EMC through other design around the semiconductor chip. Results and further possibilities are discussed.
5-10 kVA变换器中igbt传导EMI性能的实验与仿真研究
像igbt这样具有高dv/dt和di/dt速率的电源开关是EMI的来源。本文研究了不同测试电路对igbt的传导电磁干扰。此外,还从一个特殊的共模和差模干扰预测模型解释了结果,该模型适用于通过围绕半导体芯片的其他设计来确定更好的EMC解决方案。讨论了结果和进一步的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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