Single-step definition of channel waveguides with integral Bragg gratings in germanosilica-on-silicon wafers by direct UV writing

C. Gawith, G. Emmerson, S. Watts, V. Albanis, M. Ibsen, R.B. Williams, P. Smith, S. McMeekin, J. Bonar, R. Laming
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引用次数: 2

Abstract

We present a single-step technique for defining channel waveguides with internal Bragg gratings in photosensitive germanosilica-on-silicon using two interfering focussed UV beams. Early devices exhibit reflection intensities of 80% with <0.15 nm bandwidth.
直接紫外写入法在硅上锗硅晶圆中单步定义具有积分布拉格光栅的通道波导
我们提出了一种单步技术,用于定义具有内部布拉格光栅的光敏锗硅-硅中使用两个干扰聚焦紫外光束的通道波导。早期器件的反射强度为80%,带宽<0.15 nm。
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