A novel pseudo resistor structure for biomedical front-end amplifiers.

Yu-Chieh Huang, Tzu-Sen Yang, Shun-Hsi Hsu, Xin-Zhuang Chen, Jin-Chern Chiou
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引用次数: 2

Abstract

This study proposes a novel pseudo resistor structure with a tunable DC bias voltage for biomedical front-end amplifiers (FEAs). In the proposed FEA, the high-pass filter composed of differential difference amplifier and a pseudo resistor is implemented. The FEA is manufactured by using a standard TSMC 0.35 μm CMOS process. In this study, three types FEAs included three different pseudo resistor are simulated, fabricated and measured for comparison and electrocorticography (ECoG) measurement, and all the results show the proposed pseudo resistor is superior to other two types in bandwidth. In chip implementation, the lower and upper cutoff frequencies of the high-pass filter with the proposed pseudo resistor are 0.15 Hz and 4.98 KHz, respectively. It also demonstrates lower total harmonic distortion performance of -58 dB at 1 kHz and higher stability with wide supply range (1.8 V and 3.3 V) and control voltage range (0.9 V and 1.65 V) than others. Moreover, the FEA with the proposed pseudo successfully recorded spike-and-wave discharges of ECoG signal in in vivo experiment on rat with pentylenetetrazol-induced seizures.
一种用于生物医学前端放大器的伪电阻结构。
本研究提出了一种具有可调直流偏置电压的新型生物医学前端放大器伪电阻结构。在所提出的有限元分析中,实现了由差分放大器和伪电阻组成的高通滤波器。FEA采用标准的台积电0.35 μm CMOS工艺制造。在本研究中,模拟、制作和测量了三种不同的伪电阻器的三种FEAs,进行了比较和皮质电图(ECoG)测量,结果表明所提出的伪电阻器在带宽上优于其他两种类型。在芯片实现中,采用该伪电阻的高通滤波器的下截止频率为0.15 Hz,上截止频率为4.98 KHz。在1 kHz时,它的总谐波失真性能较低,为-58 dB,并且具有较宽的供电范围(1.8 V和3.3 V)和控制电压范围(0.9 V和1.65 V)。此外,在戊四唑诱发大鼠癫痫发作的体内实验中,该方法成功地记录了脑电图信号的峰波放电。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
2.20
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