Effect of Auger recombination on non-equilibrium charge carrier concentration in InGaAsSb/AlGaAsSb quantum wells

IF 0.2 Q4 PHYSICS, MULTIDISCIPLINARY

St Petersburg Polytechnic University Journal-Physics and Mathematics Pub Date : 2016-12-01 DOI:10.1016/j.spjpm.2016.11.007

Maxim Ya Vinnichenko , Ivan S. Makhov , Anatoliy V. Selivanov , Anastasiya M. Sorokina , Leonid E. Vorobjev , Dmitry A. Firsov , Leon Shterengas , Gregory Belenky

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Abstract

We have experimentally studied the interband photoluminescence spectra of InGaAsSb/AlGaAsSb quantum wells with different well widths and calculated the dependence of the charge carrier concentration participating in radiative recombination on the pumping intensity. The results of theoretical calculations appeared to be in a good agreement with the experimental relationship between the photoluminescence intensity at spectral maxima and the pumping intensity. The resonant Auger recombination involving two holes and one electron and causing a significant decrease in the charge carrier concentration was detected in one of the samples. Recommendations for suppressing the harmful non-radiative Auger recombination were made to increase the operating efficiency of semiconductor injection lasers at wavelengths of about 3 µm.

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俄歇复合对InGaAsSb/AlGaAsSb量子阱中非平衡载流子浓度的影响

实验研究了不同井宽InGaAsSb/AlGaAsSb量子阱的带间光致发光光谱，并计算了参与辐射复合的载流子浓度与抽运强度的关系。理论计算结果与光谱最大值处的光致发光强度与抽运强度之间的实验关系基本一致。在其中一个样品中检测到涉及两个空穴和一个电子的共振俄歇复合，并导致载流子浓度显著降低。提出了抑制有害的非辐射俄歇复合的建议，以提高波长约为3µm的半导体注入激光器的工作效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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St Petersburg Polytechnic University Journal-Physics and Mathematics PHYSICS, MULTIDISCIPLINARY-

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50.00%

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