1/f noise in thermo EMF of intrinsic and extrinsic semiconductors

Abstract

1/f noise has been observed in the open circuit thermo e.m.f. of both intrinsic germanium and extrinsic germanium and silicon. The experimental results can be explained only by assuming that the 1/f noise is due to fluctuations in the mobility of free charge carriers. The 1/f noise behaviour of the open circuit thermo e.m.f. of intrinsic germanium is similar to the noise behaviour of the open circuit e.m.f. of concentration cells of ionic aqueous solutions.