Association of elevated levels of peripheral complement components with cortical thinning and impaired logical memory in drug-naïve patients with first-episode schizophrenia.

IF 3 Q2 PSYCHIATRY
Hua Yu, Peiyan Ni, Yang Tian, Liansheng Zhao, Mingli Li, Xiaojing Li, Wei Wei, Jinxue Wei, Qiang Wang, Wanjun Guo, Wei Deng, Xiaohong Ma, Jeremy Coid, Tao Li
{"title":"Association of elevated levels of peripheral complement components with cortical thinning and impaired logical memory in drug-naïve patients with first-episode schizophrenia.","authors":"Hua Yu, Peiyan Ni, Yang Tian, Liansheng Zhao, Mingli Li, Xiaojing Li, Wei Wei, Jinxue Wei, Qiang Wang, Wanjun Guo, Wei Deng, Xiaohong Ma, Jeremy Coid, Tao Li","doi":"10.1038/s41537-023-00409-1","DOIUrl":null,"url":null,"abstract":"<p><p>Schizophrenia has been linked to polymorphism in genes encoding components of the complement system, and hyperactive complement activity has been linked to immune dysfunction in schizophrenia patients. Whether and how specific complement components influence brain structure and cognition in the disease is unclear. Here we compared 52 drug-naïve patients with first-episode schizophrenia and 52 healthy controls in terms of levels of peripheral complement factors, cortical thickness (CT), logical memory and psychotic symptoms. We also explored the relationship between complement factors with CT, cognition and psychotic symptoms. Patients showed significantly higher levels of C1q, C4, factor B, factor H, and properdin in plasma. Among patients, higher levels of C3 in plasma were associated with worse memory recall, while higher levels of C4, factor B and factor H were associated with thinner sensory cortex. These findings link dysregulation of specific complement components to abnormal brain structure and cognition in schizophrenia.</p>","PeriodicalId":74758,"journal":{"name":"Schizophrenia (Heidelberg, Germany)","volume":null,"pages":null},"PeriodicalIF":3.0000,"publicationDate":"2023-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10630449/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Schizophrenia (Heidelberg, Germany)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1038/s41537-023-00409-1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PSYCHIATRY","Score":null,"Total":0}
引用次数: 0

Abstract

Schizophrenia has been linked to polymorphism in genes encoding components of the complement system, and hyperactive complement activity has been linked to immune dysfunction in schizophrenia patients. Whether and how specific complement components influence brain structure and cognition in the disease is unclear. Here we compared 52 drug-naïve patients with first-episode schizophrenia and 52 healthy controls in terms of levels of peripheral complement factors, cortical thickness (CT), logical memory and psychotic symptoms. We also explored the relationship between complement factors with CT, cognition and psychotic symptoms. Patients showed significantly higher levels of C1q, C4, factor B, factor H, and properdin in plasma. Among patients, higher levels of C3 in plasma were associated with worse memory recall, while higher levels of C4, factor B and factor H were associated with thinner sensory cortex. These findings link dysregulation of specific complement components to abnormal brain structure and cognition in schizophrenia.

Abstract Image

Abstract Image

首发精神分裂症药物幼稚患者外周补体成分水平升高与皮质变薄和逻辑记忆受损的关系。
精神分裂症与编码补体系统成分的基因多态性有关,而精神分裂症患者的补体活性亢进与免疫功能障碍有关。在这种疾病中,特定的补体成分是否以及如何影响大脑结构和认知尚不清楚。在这里,我们比较了52名首次服用药物的精神分裂症患者和52名健康对照者的外周补体因子水平、皮层厚度(CT)、逻辑记忆和精神病症状。我们还探讨了补体因子与CT、认知和精神病症状之间的关系。患者的血浆中C1q、C4、B因子、H因子和丙烯醛水平显著升高。在患者中,血浆中C3水平较高与记忆回忆较差有关,而C4、B因子和H因子水平较高与感觉皮层较薄有关。这些发现将特定补体成分的失调与精神分裂症患者大脑结构和认知的异常联系起来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信