{"title":"Quantitative Compositional Mapping on a Micrometer Scale","authors":"D. Newbury","doi":"10.6028/jres.093.141","DOIUrl":null,"url":null,"abstract":"[38] Stevie, F. A., Kahora, P. M., Singh, S., and Kroko, L., Atomic and Molecular Relative Secondary Ion Yields of 46 Elements in Si for 0?and Cs' Bombardment, Proceedings of SIMS VI Conference, Versailles, 1987, J. Wiley, Chichester, in press. [39] Wilson, R. G. and Novak, S. W., Systematics of SIMS Relative Sensitivity Factors versus Electron Affinity and Ionization Potential for Si, Ge, GaAs, GaP, InP and HgCdTe Determined from Implant Calibration Standards for about 50 Elements, Proceedings of the SIMS VI Conference, Versailles, 1987, J. Wiley, Chichester, in press.","PeriodicalId":17082,"journal":{"name":"Journal of research of the National Bureau of Standards","volume":"93 1","pages":"518 - 520"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of research of the National Bureau of Standards","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.6028/jres.093.141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
[38] Stevie, F. A., Kahora, P. M., Singh, S., and Kroko, L., Atomic and Molecular Relative Secondary Ion Yields of 46 Elements in Si for 0?and Cs' Bombardment, Proceedings of SIMS VI Conference, Versailles, 1987, J. Wiley, Chichester, in press. [39] Wilson, R. G. and Novak, S. W., Systematics of SIMS Relative Sensitivity Factors versus Electron Affinity and Ionization Potential for Si, Ge, GaAs, GaP, InP and HgCdTe Determined from Implant Calibration Standards for about 50 Elements, Proceedings of the SIMS VI Conference, Versailles, 1987, J. Wiley, Chichester, in press.