Preparation and Performance Research of CuInSe 2 Materials Applied in Solar Cell

结晶过程及技术期刊(英文) Pub Date : 2012-10-17 DOI:10.4236/JCPT.2012.24020

Xuewen Wang, Y. Zhang, Z. Deng, Yujue Wang, Zidong Wang, I. Shih

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引用次数: 3

Abstract

At present, CuInSe2 (referred to as CIS) semiconductor has become one of the hot points in solar cell field at home and abroad for its excellent performances, such as direct bandgap, high light absorption coefficient, high photoelectric conversion efficiency and long-term stability. In this paper, the CIS bulk materials are prepared by the horizontal Bridgman method with double-heat sources, the crystal structure, microstructure morphology and composition of the samples are analyzed in X-ray diffraction instrument (XRD) and scanning electronic microscope (SEM) with Energy Dispersive X-ray Spectrum (EDX), and surface electrical state and electrical properties of the samples are characterized in X-ray photoelectron spectroscopy (XPS) and four point resistivity test system. The results show that the CIS crystal was grown, and that the conductive performance of the samples is good which display the characteristics of p-type semiconductor. Furthermore, a thin film CIS sample was obtained by argon ion-beam scanning bombardment, and it has high solar energy absorptivity and the bandgap of 0.99 eV analyzed in Ultraviolet-visible Spectrum that is suitable for solar cell. Keywords: Solar

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太阳能电池用cuinse2材料的制备及性能研究

目前，CuInSe2(简称CIS)半导体以其直接带隙、高光吸收系数、高光电转换效率和长期稳定性等优异性能，成为国内外太阳能电池领域的热点之一。本文采用双热源水平Bridgman法制备了CIS块状材料，利用x射线衍射仪(XRD)和能量色散x射线能谱仪(EDX)对样品的晶体结构、微观形貌和组成进行了分析，并利用x射线光电子能谱仪(XPS)和四点电阻率测试系统对样品的表面电学状态和电学性能进行了表征。结果表明，CIS晶体生长良好，样品导电性能良好，具有p型半导体的特点。采用氩离子束扫描轰击法制备了薄膜CIS样品，样品具有较高的太阳能吸收率，紫外可见光谱分析带隙为0.99 eV，适合太阳能电池使用。关键词:太阳能

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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结晶过程及技术期刊(英文)

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