Growth of Gallium Oxide Nanowires by Pulsed Laser Deposition

H. Yamahara, M. Seki, H. Tabata
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引用次数: 12

Abstract

We report on the synthesis of gallium oxide nanowires by pulsed laser deposition using a gold catalyst. In the vapor-liquid-solid process, gold thickness was the crucial parameter for deciding the morphology of nanowires. In the case of 1 nm thick gold, homogeneous nanowire growth was confirmed at temperatures of 700°C to 850°C. Transmission electron microscopy and selected area electron diffraction measurements showed that the nanowires were polycrystalline. In the cathode luminescence spectra, UV, blue, green and red emission peaks were observed, as reported in previous studies. As growth temperature was increased, the relative intensities of blue, green, and red emissions decreased. Thermal annealing treatments were effective in decreasing the blue, green and red emission peaks, suggesting that these emission peaks were associated with oxygen vacancies.
脉冲激光沉积法生长氧化镓纳米线
报道了以金为催化剂,脉冲激光沉积法制备氧化镓纳米线的方法。在气-液-固工艺中,金的厚度是决定纳米线形貌的关键参数。在1 nm厚的金的情况下,在700°C到850°C的温度下,证实了均匀的纳米线生长。透射电镜和选择区域电子衍射测试表明,纳米线是多晶的。在阴极发光光谱中,观察到紫外、蓝、绿、红等发射峰,与前人的研究一致。随着生长温度的升高,蓝、绿、红排放的相对强度降低。热退火处理可以有效地降低蓝色、绿色和红色发射峰,表明这些发射峰与氧空位有关。
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