Dielectric and Optical Characterization of Boron Doped Ammonium Dihydrogen Phosphate

Delci Zion, Shyamala Devarajan, T. Arunachalam
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引用次数: 15

Abstract

Single crystals of pure and boron doped ammonium dihydrogen phosphate were grown from aqueous solution by slow solvent evaporation process. ICP studies were done to confirm the presence of the dopant boron in the parent crystal. The values of the lattice parameters were determined by single crystal X-ray diffraction. The pure and doped ADP crystals were found to have tetragonal structure. Complete optical characterizations of the crystals were done using the FTIR, UV-Vis and NLO studies. The presences of the various functional groups in the crystals were identified by FTIR spectrum. The band gap energies of the pure and doped crystals have been calculated at their cut off frequencies using the UV-Vis spectrum. The second harmonic generation efficiency of the crystals was determined. The electric properties of the grown crystal have been analyzed by studying the variation of dielectric constant and dielectric loss with frequency.
掺硼磷酸二氢铵的介电和光学特性
采用缓慢溶剂蒸发法制备了纯磷酸二氢铵和掺硼磷酸二氢铵单晶。ICP研究证实了掺杂硼在母晶中的存在。通过单晶x射线衍射测定了晶格参数的取值。发现纯ADP和掺杂ADP晶体具有四方结构。使用FTIR, UV-Vis和NLO研究完成了晶体的完整光学表征。用FTIR光谱鉴定了晶体中各种官能团的存在。利用紫外-可见光谱计算了纯晶体和掺杂晶体在其截止频率处的带隙能。测定了晶体的二次谐波产生效率。通过研究晶体介电常数和介电损耗随频率的变化,分析了晶体的电性能。
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