Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON

A. Touati, S. Chatbouri, N. Sghaier, A. Kalboussi
{"title":"Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON","authors":"A. Touati, S. Chatbouri, N. Sghaier, A. Kalboussi","doi":"10.4236/WJNSE.2012.24023","DOIUrl":null,"url":null,"abstract":"Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON.","PeriodicalId":66816,"journal":{"name":"纳米科学与工程(英文)","volume":"02 1","pages":"176-180"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"纳米科学与工程(英文)","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.4236/WJNSE.2012.24023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON.
两个一维多隧道结阵列结构的SIMON研究
近年来,多隧道结在单电子晶体管(SET)和单电子存储器(SEM)领域受到了广泛的关注。在本文中,我们研究了一种使用两个一维阵列MTJs连接到基本单电子电路的纳米器件结构,以分析物理参数对该结构性能和应用的影响。该装置可在室温下工作。利用蒙特卡洛仿真器SIMON对单电子电路进行了仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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