Diameter Dependent Ultrasonic Characterization of InAs Semiconductor Nanowires

M. Gupta, P. K. Dhawan, S. Verma, R. Yadav
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引用次数: 3

Abstract

In this paper, we report the diameter dependent ultrasonic characterization of wurtzite structured InAs semiconductor nanowires at the room temperature. In this work, we have calculated the non-linear higher order elastic constants of InAs nanowires validating the interaction potential model. The ultrasonic attenuation and velocity in the nanowires are determined using the elastic constants for different diameters of the nanowires. Where possible, the results are compared with the experiments. Finally, we have established the correlation between the size dependent thermal conductivity and the ultrasonic attenuation of the nanowires.
InAs半导体纳米线的直径相关超声表征
本文报道了纤锌矿结构的InAs半导体纳米线在室温下与直径相关的超声表征。在这项工作中,我们计算了InAs纳米线的非线性高阶弹性常数,验证了相互作用势模型。利用弹性常数测定了不同直径纳米线的超声衰减和速度。在可能的情况下,将结果与实验进行比较。最后,我们建立了纳米线的热导率与超声衰减之间的关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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