Influence of Annealing Atmosphere on Varistor Property of TiO2-Nb2O5-SrCO3 Ceramics

Kunyong Kang, Haodong Zhu, Gang Zhu, S. Deng
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引用次数: 2

Abstract

Varistor ceramics are typical electronic ceramics, which are widely used in circuits of overvoltage protection, high voltage stabilization and high energy surge absorption. TiO 2 varistor ceramics has the advantages of low varistor voltage and good dielectric properties, but their low nonlinearity limited the application. The influence of annealing on the varistor properties of TiO 2 -Nb 2 O 5 -SrCO 3 ceramics was investigated in this paper. TiO 2 -Nb 2 O 5 -SrCO 3 varistor ceramics were prepared by the traditional method of ball grind-ing-forming-sintering and they were annealed in oxygen and nitrogen, respec-tively. The nonlinear coefficient α and the breakdown voltage E B of the samples were tested using the varistor dc parameter meter. The microstructure of samples was analyzed by XRD, SEM, STEM-EDAX and SAEDP. The results show that during annealing, Sr 2+ ions with a larger radius obtain the kinetic energy and are segregated to grain boundaries, which increases the acceptor density of the grain boundaries and improves α. Annealing in an oxygen atmosphere, the enrichment of oxygen at grain boundaries is also helpful to increase the density of acceptor states and the height of the potential barrier, so as to further increase α. Meanwhile, annealing makes crystalline grains grow properly, which results in even grain size, reduces the porosity and increases the density of grains. So E B tends to reduce. As the doping concentration of Nb 2 O 5 and SrCO 3 is 0.15 mol%, respectively, and sintering temperature is 1300˚C, TiO 2 -Nb 2 O 5 -SrCO 3 varistor ceramics annealed in oxygen for 3 h at 750˚C achieved the highest nonlinear coefficient α = 8.9 and the lowest breakdown voltage E B = 19.1 V∙mm −1 , which annealed in nitrogen achieved α = 8.4, E B = 20.6 V∙mm −1 , both superior to unannealed samples.
退火气氛对TiO2-Nb2O5-SrCO3陶瓷压敏电阻性能的影响
压敏电阻陶瓷是典型的电子陶瓷,广泛应用于过压保护、高稳压和高能量浪涌吸收电路中。二氧化钛压敏陶瓷具有压敏电压低、介电性能好等优点,但其较低的非线性限制了其应用。研究了退火对tio2 -Nb - 2o5 - srco3陶瓷压敏电阻性能的影响。采用传统的球磨-成形-烧结法制备了tio2 -Nb - 2o5 - srco3压敏陶瓷,并分别在氧气和氮气中进行了退火。用压敏电阻直流参数计测试了样品的非线性系数α和击穿电压E B。采用XRD、SEM、STEM-EDAX和SAEDP对样品的微观结构进行了分析。结果表明:退火过程中,半径较大的Sr 2+离子获得动能并向晶界偏析,增加了晶界受体密度,提高了α;在含氧气氛下退火,晶界处氧的富集也有助于增加受体态的密度和势垒的高度,从而进一步增加α。同时,退火使晶粒生长正常,晶粒尺寸均匀,孔隙率降低,晶粒密度增大。所以eb趋向于减少。当mn2o5和srco3的掺杂浓度分别为0.15 mol%,烧结温度为1300℃时,在750℃下氧中退火3 h的tio2 -Nb 2o5 - srco3压敏陶瓷的非线性系数最高,α = 8.9,击穿电压最低,E B = 19.1 V∙mm−1,在氮气中退火的α = 8.4, E B = 20.6 V∙mm−1,均优于未退火的样品。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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