Molecular Dynamic Study of Pull-In Instability of Nano-Switches

Sogand Hoshyarmanesh, M. Bahrami
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引用次数: 3

Abstract

Capacitive nano-switches have been of great interest as replacements for conventional semiconductor switches. Accurate determination of the pull-in voltage is critical in the design process. In the present investigation, pull-in instability of nano-switches made of two parallel plates subjected to electrostatic force is studied. For this purpose, two parallel rectangular nanoplates with opposite charges are modeled based on molecular dynamics (MD) technique. Different initial gaps between nanoplates and its effect on pull-in phenomena are studied in addition to taking different values of geometrical and physical parameters into account to evaluate pull-in voltages. Here molecular dynamic simulations as an atomic interaction approach are employed for modeling of nano-switches in order to study pull-in instability considering atomic interaction and surface tension. Boundary conditions and also the van der Waals force are considered as important parameters to investigate their effects on pull-in voltage values.
纳米开关拉入不稳定性的分子动力学研究
电容式纳米开关作为传统半导体开关的替代品已经引起了人们的极大兴趣。在设计过程中,准确确定拉入电压是至关重要的。在本研究中,研究了由两个平行板制成的纳米开关在静电作用下的拉入不稳定性。为此,基于分子动力学(MD)技术对两个带相反电荷的平行矩形纳米板进行了建模。研究了纳米片间不同初始间隙对拉入现象的影响,并考虑了不同几何和物理参数值对拉入电压的影响。本文采用分子动力学模拟作为原子相互作用的方法对纳米开关进行建模,以研究考虑原子相互作用和表面张力的拉入不稳定性。边界条件和范德华力是研究它们对拉入电压值影响的重要参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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