Single Shot White Light Interference Microscopy for 3D Surface Profilometry Using Single Chip Color Camera

Q Physics and Astronomy
V. Srivastava, M. Inam, Ranjeet Kumar, D. Mehta
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引用次数: 6

Abstract

We present a single shot low coherence white light Hilbert phase microscopy (WL-HPM) for quantitative phase imaging of Si opto-electronic devices, i.e., Si integrated circuits (Si-ICs) and Si solar cells. White light interferograms were recorded by a color CCD camera and the interferogram is decomposed into the three colors red, green and blue. Spatial carrier frequency of the WL interferogram was increased sufficiently by means of introducing a tilt in the interferometer. Hilbert transform fringe analysis was used to reconstruct the phase map for red, green and blue colors from the single interferogram. 3D step height map of Si-ICs and Si solar cells was reconstructed at multiple wavelengths from a single interferogram. Experimental results were compared with Atomic Force Microscopy and they were found to be close to each other. The present technique is non-contact, full-field and fast for the determination of surface roughness variation and morphological features of the objects at multiple wavelengths.
单镜头白光干涉显微镜用于三维表面轮廓测量的单芯片彩色相机
我们提出了一种单镜头低相干白光希尔伯特相位显微镜(WL-HPM),用于Si光电器件的定量相位成像,即Si集成电路(Si- ic)和Si太阳能电池。彩色CCD相机记录白光干涉图,并将干涉图分解为红、绿、蓝三种颜色。通过在干涉仪中引入倾斜,可以充分提高WL干涉图的空间载频。利用希尔伯特变换条纹分析,从单幅干涉图中重建红、绿、蓝三色的相位图。利用单幅干涉图重建了硅集成电路和硅太阳能电池在多个波长下的三维台阶高度图。将实验结果与原子力显微镜进行了比较,发现两者是接近的。该技术具有非接触式、全场、快速的特点,可用于多波长下物体表面粗糙度变化和形态特征的测定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
0.70
自引率
0.00%
发文量
0
审稿时长
2.3 months
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