Temperature behaviour of the photoluminescence spectra of polycrystalline ZnSe films with different surface treatment

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
I. Abbasov, M. Musayev, J. Huseynov, M. Kostyrko, G. Eyyubov, D. Askerov
{"title":"Temperature behaviour of the photoluminescence spectra of polycrystalline ZnSe films with different surface treatment","authors":"I. Abbasov, M. Musayev, J. Huseynov, M. Kostyrko, G. Eyyubov, D. Askerov","doi":"10.3116/16091833/21/3/159/2020","DOIUrl":null,"url":null,"abstract":"We present the photoluminescence spectra obtained in the case of normal incidence of exciting radiation at both polished and unpolished surfaces of chemicalvapour deposited ZnSe films in the temperature range 12–300 K. The luminescence has been excited using either a continuous-wave He–Cd laser with the wavelength λex = 325 nm (i.e., under the condition hvex > Eg for the photon energy) or a semiconductor laser with λex = 532 nm (i.e., hvex < Eg). We show that the temperature dependences of intensity, spectral position and half-width of a green photoluminescence band detected in the both alternative cases are very different in the region 12–80 K. However, their behaviours become very close to each other when the temperature increases up to 180 K. Finally, the above spectral parameters are almost the same in the region 180–300 K.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.3116/16091833/21/3/159/2020","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 1

Abstract

We present the photoluminescence spectra obtained in the case of normal incidence of exciting radiation at both polished and unpolished surfaces of chemicalvapour deposited ZnSe films in the temperature range 12–300 K. The luminescence has been excited using either a continuous-wave He–Cd laser with the wavelength λex = 325 nm (i.e., under the condition hvex > Eg for the photon energy) or a semiconductor laser with λex = 532 nm (i.e., hvex < Eg). We show that the temperature dependences of intensity, spectral position and half-width of a green photoluminescence band detected in the both alternative cases are very different in the region 12–80 K. However, their behaviours become very close to each other when the temperature increases up to 180 K. Finally, the above spectral parameters are almost the same in the region 180–300 K.
不同表面处理的多晶ZnSe薄膜的光致发光光谱的温度行为
我们给出了在12-300 K温度范围内,在化学气相沉积ZnSe薄膜的抛光和未抛光表面,在正常入射激发辐射的情况下获得的光致发光光谱。利用波长为λex = 325 nm的连续波He-Cd激光器(即在光子能量为hvex > Eg的条件下)或λex = 532 nm的半导体激光器(即hvex < Eg)激发发光。结果表明,在12-80 K范围内,两种情况下检测到的绿色光致发光带的强度、光谱位置和半宽度的温度依赖性是非常不同的。然而,当温度升高到180k时,它们的行为变得非常接近。最后,上述光谱参数在180 ~ 300 K范围内基本一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信