Thermally activated spectroscopy of optical absorption in Bi12SiO20 crystals

Abstract

We suggest applying a method of thermally activated spectroscopy to the problem of impurity optical absorption. The method consists in measuring the temperature dependence of optical absorption in a wide-gap semiconductor crystal and analyzing the temperature derivative of this dependence. The above technique allows for determining the energies of thermal and optical activations and the strength of electron–phonon interaction for the impurity centres.