{"title":"Energy bandgap variation in semiconductor compound nanomaterials","authors":"P. Chaturvedi, M. Goyal","doi":"10.32908/hthp.v50.861","DOIUrl":null,"url":null,"abstract":"In the present work, we have used phenomological models for analyzing the impact of shape and size on energy band gap in semiconducting nanomaterial compounds. The models used presently are Qi model, Bond energy model and Guisbiers model. The extension of melting temperature expression for nanomaterials of the models considered is done and shape and size dependent expression of energy band gap is obtained. In this paper, we have taken group III-V semiconductor compound nanomaterials i.e., AlN, GaN, InN, GaAs and InAs. It is clear from the results obtained that decrease in the size of the semiconductor compound nanomaterials led to band gap expansion and this increase is significant for particle size below 5 nm. Comparison of the results predicted using different models with the available experimental and simulated results is done. Guisbiers model is found best out of the models considered to study the band gap expansion in semiconducting nanomaterial compounds. The energy band gap shift in valence and conduction band with size is determined in nanosemiconductors.","PeriodicalId":12983,"journal":{"name":"High Temperatures-high Pressures","volume":"1 1","pages":""},"PeriodicalIF":1.1000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"High Temperatures-high Pressures","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.32908/hthp.v50.861","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
In the present work, we have used phenomological models for analyzing the impact of shape and size on energy band gap in semiconducting nanomaterial compounds. The models used presently are Qi model, Bond energy model and Guisbiers model. The extension of melting temperature expression for nanomaterials of the models considered is done and shape and size dependent expression of energy band gap is obtained. In this paper, we have taken group III-V semiconductor compound nanomaterials i.e., AlN, GaN, InN, GaAs and InAs. It is clear from the results obtained that decrease in the size of the semiconductor compound nanomaterials led to band gap expansion and this increase is significant for particle size below 5 nm. Comparison of the results predicted using different models with the available experimental and simulated results is done. Guisbiers model is found best out of the models considered to study the band gap expansion in semiconducting nanomaterial compounds. The energy band gap shift in valence and conduction band with size is determined in nanosemiconductors.
期刊介绍:
High Temperatures – High Pressures (HTHP) is an international journal publishing original peer-reviewed papers devoted to experimental and theoretical studies on thermophysical properties of matter, as well as experimental and modelling solutions for applications where control of thermophysical properties is critical, e.g. additive manufacturing. These studies deal with thermodynamic, thermal, and mechanical behaviour of materials, including transport and radiative properties. The journal provides a platform for disseminating knowledge of thermophysical properties, their measurement, their applications, equipment and techniques. HTHP covers the thermophysical properties of gases, liquids, and solids at all temperatures and under all physical conditions, with special emphasis on matter and applications under extreme conditions, e.g. high temperatures and high pressures. Additionally, HTHP publishes authoritative reviews of advances in thermophysics research, critical compilations of existing data, new technology, and industrial applications, plus book reviews.