Reflection of Macroporous Silicon, Nanowires, and a Two-layer Structure of Silicon with an Effective Medium

Q3 Physics and Astronomy
V. Onyshchenko
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引用次数: 0

Abstract

A theoretical model of reflection of macroporous silicon and arrays of silicon nanowires on a monocrys-talline substrate is presented. Macroporous silicon and silicon structured by nanowires are considered as a two-layer structure of silicon with an effective medium. The analytical model of the reflection from a two-layer silicon structure with an effective medium takes into account the absorption of light by the structure and the multiple reflections of light from the surfaces of the sample and the interface between the effective medium and the monocrystalline substrate. The reflection coefficient from a structured surface, which is the boundary between two media, contains the complex index of refraction of silicon. The effective index of refraction of the effective medium is found from the expression for mixing two media. The reflection of light falling on flat surfaces at different angles is calculated according to Fresnel's formulas. The frontal structured surface and the second structured surface were considered as Lambert surfaces. Total internal reflection from a flat surface between silicon and air is given by Snelius' law, and from structured surfaces between silicon and the effective medium and between the effective medium and air is accounted for by co-efficients. The reflection spectra from macroporous silicon and arrays of silicon nanowires on a monocrys-talline substrate are calculated according to analytically derived formulas. It is shown that the magnitude of reflection spectra from macroporous silicon and arrays of silicon nanowires on a monocrystalline substrate decreases when the volume fraction of pores increases. The reflectance begins to increase again when the pore volume fraction is high. Reflection from the surface between the effective medium and air is observed at a high volume fraction of pores.
大孔硅的反射、纳米线和有效介质下硅的两层结构
提出了大孔硅和硅纳米线阵列在单晶衬底上反射的理论模型。大孔硅和纳米线结构的硅被认为是具有有效介质的两层硅结构。具有有效介质的两层硅结构的反射解析模型考虑了该结构对光的吸收以及样品表面和有效介质与单晶衬底之间的多次反射。作为两种介质边界的结构表面的反射系数包含了硅的复折射率。由两种介质混合时的表达式求出有效介质的有效折射率。根据菲涅耳公式,计算了光以不同角度落在平面上的反射光。将正面构造面和二次构造面视为兰伯特曲面。在硅和空气之间的平坦表面上的总内反射由斯涅利乌斯定律给出,在硅和有效介质之间以及有效介质和空气之间的结构表面上的总内反射用系数表示。根据解析导出的公式计算了大孔硅和硅纳米线阵列在单晶衬底上的反射光谱。结果表明,随着孔隙体积分数的增加,大孔硅和单晶衬底上硅纳米线阵列的反射光谱幅度减小。当孔隙体积分数较高时,反射率又开始增加。有效介质和空气之间的表面反射在孔隙的高体积分数处被观察到。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Nano-and electronic Physics
Journal of Nano-and electronic Physics Materials Science-Materials Science (all)
CiteScore
1.40
自引率
0.00%
发文量
69
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