Ultra-low Power CMOS Front-End Readout ASIC for Portable Digital Radiation Detector

IF 5.2 1区 计算机科学 Q1 COMPUTER SCIENCE, INFORMATION SYSTEMS
Yunbo Zhou (周云波) , Yu Yang (杨 煜) , Yueer Shan (单悦尔) , Huafeng Cao (曹华锋) , Bing Yang (杨 兵) , Zongguang Yu (于宗光)
{"title":"Ultra-low Power CMOS Front-End Readout ASIC for Portable Digital Radiation Detector","authors":"Yunbo Zhou (周云波) ,&nbsp;Yu Yang (杨 煜) ,&nbsp;Yueer Shan (单悦尔) ,&nbsp;Huafeng Cao (曹华锋) ,&nbsp;Bing Yang (杨 兵) ,&nbsp;Zongguang Yu (于宗光)","doi":"10.1016/S1007-0214(11)70024-4","DOIUrl":null,"url":null,"abstract":"<div><p><span><span>An ultra-low power complementary metal-oxide-semiconductor (CMOS) front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain (detector capacitance is 20 pF). By operating this front-end readout ASIC in the weak inversion region, the ultra-low </span>power dissipation is only 0.1 mW/channel (3.0 V). Simulations and test results suggest that this design gives </span>lower power consumption<span> than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.</span></p></div>","PeriodicalId":60306,"journal":{"name":"Tsinghua Science and Technology","volume":null,"pages":null},"PeriodicalIF":5.2000,"publicationDate":"2011-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1007-0214(11)70024-4","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Tsinghua Science and Technology","FirstCategoryId":"1093","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1007021411700244","RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"COMPUTER SCIENCE, INFORMATION SYSTEMS","Score":null,"Total":0}
引用次数: 3

Abstract

An ultra-low power complementary metal-oxide-semiconductor (CMOS) front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain (detector capacitance is 20 pF). By operating this front-end readout ASIC in the weak inversion region, the ultra-low power dissipation is only 0.1 mW/channel (3.0 V). Simulations and test results suggest that this design gives lower power consumption than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.

便携式数字辐射探测器的超低功耗CMOS前端读出专用集成电路
研制了一种用于便携式数字辐射探测器的超低功耗CMOS前端读出专用集成电路。采用CSMC 0.5 μm DPDM工艺制作了具有电荷敏感放大器和半高斯脉冲整形器的ASIC。0 pF时ENC噪声为363 e,噪声斜率为23 e/pF,符合严格的低噪声要求。峰值时间为250ns,转换增益为100mv /fC(检测器电容为20pf)。通过在弱反转区工作,该前端读出ASIC的超低功耗仅为0.1 mW/通道(3.0 V)。仿真和测试结果表明,该设计比在强反转区工作的前端读出ASIC功耗更低,适用于便携式数字辐射探测器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
12.10
自引率
0.00%
发文量
2340
文献相关原料
公司名称 产品信息 采购帮参考价格
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信