Giant Magnetoresistance of Spin Valve Films with NiO Antiferromagnetic Films

H. Hoshiya;M. Komuro;K. Mitsuoka;Y. Sugita
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引用次数: 11

Abstract

The magnetic and magnetoresistive properties of films having spin valve structures were investigated. The basic structure of such films consists of two ferromagnetic layers separated by a Cu layer. One of the ferromagnetic layers is strongly biased by an NiO antiferromagnetic film in direct exchange contact with it. Spin valve films having an NiO/NiFe/Cu/NiFe structure exhibit good sensitivity, and the MR ratio (Δρ/ρ) is 4% in an applied field of 10 Oe. Films with a layered NiO/NiFe/Cu/NiFe/Cu/NiFe/NiO structure have an MR ratio of 7% in a field of 10 Oe. On the other hand, NiO/NiFe/Co/Cu/Co/NiFe films exhibit an MR ratio of 6% to 7.5%. The thermal stability of spin valve films was also studied.
NiO反铁磁薄膜自旋阀薄膜的巨磁电阻
研究了具有自旋阀结构的薄膜的磁性和磁阻特性。这种薄膜的基本结构由两个被Cu层分隔开的铁磁层组成。其中一个铁磁层被与其直接交换接触的NiO反铁磁膜强偏置。具有NiO/NiFe/Cu/NiFe结构的自旋阀膜表现出良好的灵敏度,并且在10Oe的外加场中MR比(Δρ/ρ)为4%。具有层状NiO/NiFe/Cu/NiFe/Cu/NiFe/NiO结构的膜在10Oe的场中具有7%的MR比。另一方面,NiO/NiFe/Co/Cu/Co/NiFe薄膜的MR比为6%至7.5%。还研究了自旋阀薄膜的热稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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