K. Yamaguchi;Y. Naitou;O. Nakajima;H. Matsuki;K. Murakami
{"title":"Characteristics of a DC-DC Converter Using a Thin Film Microtransformer and a Microinductor","authors":"K. Yamaguchi;Y. Naitou;O. Nakajima;H. Matsuki;K. Murakami","doi":"10.1109/TJMJ.1994.4565962","DOIUrl":null,"url":null,"abstract":"A thin-film microtransformer and a microinductor were fabricated, using photolithographic techniques for all processes. The microtransformer and microinductor are the same size, 3.5×3.9×0.06 mm\n<sup>3</sup>\n, and both have a layered structure with circular spiral windings between the upper and lower CoFeSiB films. The microtransformer and microinductor were mounted on a primary controlled forward converter, and the converter was operated at high frequencies between 6 and 10 MHz with a load resistance of 51 Ω; an output voltage of 1.9 V was obtained for an input voltage of 6 V. This result is important as a first step toward developing a microconverter in which transformers, inductors, capacitors, and rectifier diodes are integrated monolithically.","PeriodicalId":100647,"journal":{"name":"IEEE Translation Journal on Magnetics in Japan","volume":"9 6","pages":"84-89"},"PeriodicalIF":0.0000,"publicationDate":"1994-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TJMJ.1994.4565962","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Translation Journal on Magnetics in Japan","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/4565962/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A thin-film microtransformer and a microinductor were fabricated, using photolithographic techniques for all processes. The microtransformer and microinductor are the same size, 3.5×3.9×0.06 mm
3
, and both have a layered structure with circular spiral windings between the upper and lower CoFeSiB films. The microtransformer and microinductor were mounted on a primary controlled forward converter, and the converter was operated at high frequencies between 6 and 10 MHz with a load resistance of 51 Ω; an output voltage of 1.9 V was obtained for an input voltage of 6 V. This result is important as a first step toward developing a microconverter in which transformers, inductors, capacitors, and rectifier diodes are integrated monolithically.