Soft Magnetic Properties of Highly Resistive Co-Al-N Alloy Films

S. Ohnuma;S. Furukawa;F. Matsumoto;H. Fujimori;K. Takahiro;S. Nagata;S. Yamaguchi;T. Masumoto
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引用次数: 10

Abstract

The effects of the Al and N content on the structure and properties of Co .95 Fe .05 -Al-N films prepared by rf reactive magnetron sputtering using (N 2 +Ar) gas were studied. TEM observations revealed that nitrided films are composed of heterogeneous phases with a very fine network structure. It was found that the properties of films are determined mainly by the combination of the Al and N concentrations. The coercivity of films containing more than 10 at% Al decreases with increasing N content, even when the film thickness is more than 2 μm. A steep increase in the electrical resistivity and a slight decrease in the magnetization of films containing more than 15 at% Al were observed during the initial increase in the N concentration, and both electrical resistivity and magnetization decreased rapidly when the N concentration was the same as that of Al. These anomalies are attributed to intergranular materials, indicating the presence in these films of a phase rich in Al and N.
高电阻Co-Al-N合金薄膜的软磁性能
研究了Al和N含量对(N2+Ar)气体射频反应磁控溅射制备的Co.95Fe-05-Al-N薄膜结构和性能的影响。TEM观察表明,氮化膜由具有非常精细的网络结构的非均匀相组成。研究发现,薄膜的性能主要由Al和N浓度的组合决定。Al含量大于10at%的薄膜的矫顽力随着N含量的增加而降低,即使当薄膜厚度大于2μm时也是如此。在N浓度最初增加的过程中,观察到含Al超过15at%的薄膜的电阻率急剧增加,磁化强度略有下降,当N浓度与Al浓度相同时,电阻率和磁化强度都迅速下降。这些异常归因于晶间材料,表明在这些膜中存在富含Al和N的相。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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